Effect on Defect in Mn-doped Ferromagnetic A1GaP2Semiconductor

The AlGaP ternary material is used in devices such as visible light-emitting diodes, laser diodes, heterojuction bipolar transistors, and so on [1]. The opportunities of spintronics applications have limited due to the low solubility of magnetic ions in non-magnetic semiconductor hosts. Diluted Magnetic Semiconductor (DMS) possess interesting magnetic behaviour arising due to the replacement of small amount of host anion by magnetic impurity. For the realization of DMS materials in practical applications, they should exhibit room temperature ferromagnetic ordering. When ferromagnetic metals are used as spin injectors, the polarization in the semiconductor tends to be quickly lost via spin-flip scattering. It is one of the primary challenges to create the ferromagnetic semiconductors due to the difficulty in the spin-injection into the semiconductors to form DMS at room temperature.