Temperature Dependent Electrical Transport Properties of High Carrier Mobility Reduced Graphene Oxide Thin Film Devices

We report temperature dependent electrical transport properties of high mobility reduced graphene oxide (RGO) thin films fabricated by pulse laser deposition. The temperature dependent (5K-350K) four terminal electrical transport property measurements confirm variable range hopping and thermally activated transport mechanism of the charge carriers at low (5K-210K) and high temperature (210K-350K) regions, respectively. The calculated localization length, the density of states near the Fermi level (E
_F
), hopping energy, and Arrhenius energy gap provide useful information to explain the excellent electrical properties of the RGO films. Hall mobility measurement confirms p-type characteristics of the thin films. The charge carrier Hall mobility can be engineered by tuning the growth parameters, and the measured maximum mobility was 1596 cm
²
v
^-1
s
^-1
. The optimization of the improved electrical property is well supported by structural properties such as the defect density, average size of sp
²
clusters and degree of reduction, which were investigated by Raman spectroscopy and X-ray diffraction analysis.