Weak Antilocalization Model of N-Type Bi2Se3 Whiskers

Temperature dependencies of the n-type conductivity Bi
₂
Se
₃
whiskers doped with palladium Pd dopant to the concentration of (1÷2)×10
¹⁹
cm
^-3
which correspond to the metal side of the metal-insulator transition (MIT) were studied at low temperatures down to 1.5 K. The sharp drop was revealed on the temperature dependencies of the whiskers resistance at temperature of 5.3 K. The contribution of some effects as an electron localization, Kondo effect and the superconductivity were observed in the temperature range 1.5÷77K. The magnetoresistance in the n-type conductivity Bi
₂
Se
₃
whiskers doped with different Pd concentration were measured in the magnetic field 0÷10T and the same temperature range. The weak antilocalization model was considered as result of the magnetoconductance studies due to surface spin-orbit interaction in the n-type conductivity Bi
₂
Se
₃
whiskers.