Simulation of the Indium Gallium Nitride Multijunction Solar Cell Performances

During the past few years a great variety of multi-junction solar cells has been developed with the aim of a further increase in efficiency beyond the limits of single junction devices. InxGal-xN is one of a few alloys that can meet this key requirement. While in mechanically stacked multi-junction (MJ) cells the subcells usually have separate contacts, monolithic MJ cells are epitaxial grown on one substrate and the sub cells are interconnected in series by tunnel diodes leading to a standard two-terminal contact. In this paper we simulate and optimize monolithic III-V In
_0.52
G
_a0.48
N I In
_0..84
Ga
_0.16
N dual junction (DJ) solar cells between them tunnel junctionIn
_0.65
Ga
_0.35
N by using a AMPS-ID (Analysis of Microelectronic and photonic structure) software simulator to obtain the maximum conversion efficiency. The doping densities for the six layers of the device are investigated under in 1-sun AM1.5 illumination and at room temperature for optimized performance of solar cell. The optimized tandem solar cell characteristic parameters for cell are short circuit current density of 24.32mA/cm2 open circuit voltage of 1.26V, fill factor of 0.90and efficiency of 27.62%.