A New Low-Power and High-Linearity CMOS Bulk-Injection Mixer in $0.13\ \mu m$ Technology

This paper presents a low-power, high-linear and ultra-wideband (UWB) mixer using the bulk-injection technique. The proposed mixer is realized with a cross-coupled pair transistor as the transconductance stage, a Gilbert-cell to modulate the RF current with LO signal and resistors R
L
at the output IF port. In this circuit, the RF signal is applied to the bulk terminals of the first stage for low-power consumption and high conversion gain. Using bulk-injection technique allows more flat conversion gain over a wide range of frequencies from 3.1 GHz to 8.5 GHz. Also, a distortion analysis of the proposed bulk-driven mixer is presented based on Volterra series. To compare with the simulation results, the effects of the second- and third-order intermodulation distortions of the circuit are provided. In the designing of the circuit, the bulk-injection transistors are set to operate in the subthreshold region to reduce the power dissipation as low as possible. According to the simulation results, the proposed mixer dissipates 0.448 mW power from a 1.6V supply voltage and also, achieves 7dBm to 10dBm IIP3, 85dBm IIP2. Also, the proposed mixer offers the simulated conversion gain from 12.65 dB to 13.7 dB and DSB noise figure from 13.7 to 17.4 dB. The proposed mixer is designed using a TSMC
$0.13 \mathbf{\mu m}$
RF CMOS technology.