Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in $\beta$ -Ga2O3 FETs

A novel technique is proposed for the simultaneous extraction of energy distribution of donor- and acceptor-like interface trap states [D
_{it_D}
(E) and D
_{it_A}
(E)] over a wide range of bandgap energy using deep UV light with sub-bandgap (E
_ph
= hν <; E
_g
) photons less than the bandgap of the β-gallium oxide (β-Ga
₂
O
₃
) channel material in the β-Ga
₂
O
₃
field-effect transistors. In the proposed technique,we characterized D
_{it_D}
(E) and D
_{it_A}
(E) separately based on the difference in the gate voltage (V
_GS
)-dependent ideality factors [d Δη(V
_GS
)/dV
_GS
] for the photoresponsive carriers excited from D
_{it_D}
(E) and D
_{it_A}
(E) under two different regions (V
_ON
<; V
_GS
<; V
_FB
and V
_FB
<; V
_GS
<; V
_T
) in the subthreshold operation.