Guest Editorial Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor Devices

Silicon CMOS technology has fueled the phenomenal growth in semiconductor electronics over the past several decades. The miniaturization of a transistor, the basic tenet of technology scaling, is at the core of this revolution. Despite several challenges, the innovations in materials, processes, and device architecture have ensured that Moore’s law is still alive and going strong, with 7-nm silicon FinFET technology in volume production. However, over the past couple of decades, there has been a realization that the silicon CMOS technology may reach the end of scaling unless it is augmented and complemented by other semiconductors. For instance, there has been a substantial effort in the research community to integrate other bulk semiconductors such as germanium and III-Vs, into silicon technology.