${L}_{{g}} = {87}$ nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and $f_{{T}}$ of 559 GHz

We present our latest results on L
_g
= 87 nm InAlAs/InGaAs high-electron-mobility transistors with an excellent combination of dc and high-frequency characteristics. We obtained a maximum transconductance of 3 S/mm at V
_DS
= 0.9 V, an ON-resistance of 273 Ω-μm, a current gain cutoff frequency of 559 GHz, and a maximum oscillation frequency of 671 GHz. According to small-signal modeling, these outstanding device metrics are a consequence of the indium-rich InGaAs channel with very high Hall mobility, compact device design with L
_SD
= 1 μm, and an optimized gate process that yields well-tempered behavior.