Numerical Analysis of PbSe/GaAs Quantum Dot Intermediate Band Solar Cell (QDIBSC)

Solar cell efficiency is still not significant enough due to various reasons. One of them is not to utilize the lower energetic photons of the spectrum beyond the material bandgap. If quantum dot can be introduced within the intrinsic region of a p-i-n structured solar cell, a sub band in the middle of conduction band (CB) and valance band (VB) will form. Low energy photons are absorbed via the sub band called Intermediate Band (IB). Therefore, short circuit current (J
_SC
) increases hence the efficiency. In this work, the mathematical model of QDIBSC with PbSe/GaAs has been introduced. MATLAB has been used to simulate the proposed cell. In this research work, the cell has been modelled with quantum dot and 37.52% conversion efficiency was obtained.