The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors

Mathematical model and simulation results of devices with intervalley electron transfer effect based on graded-gap semiconductors are presented in this article. Drift of space-charge waves and the occurrence of self-oscillations in such devices are analyzed. Moreover, this paper aims to show that the use of graded-gap semiconductors makes it possible to obtain the generation in the sub-terahertz range.