Survey on Improvement of PVT aware Variations in Tunnel FET on SRAM Cells

TFET-Tunnel Field Effect transistors is an upcoming transistor. MOSFET (Metal Oxide Semiconductor Field Effect Transistors) is generally used for low Power applications in electronics devices. The structure of TFET is approximately very closer to MOSFET, however with different fundamental switching mechanism. The Switching activity of T-FET is based on the mechanism of modulating quantum tunneling through a barrier instead of modulating thermionic emission over a barrier as in traditional MOSFETs, there are different types of SRAM cells using the TFETs this paper is a survey of work done on various models and a proposal of INDEP method for improving the power, voltage and temperature variations using the tunnel FET on 6T SRAM cells.