Millimeter-wave Signal Generation and Detection via the same Triple Barrier RTD and on-chip Antenna

Signal generation and detection at mm-wave frequencies via a single chip size component is demonstrated. The monolithic integration consists of high current density Triple Barrier Resonant Tunneling Diode into a slot antenna. The asymmetrical current voltage characteristic of the Triple Barrier Resonant Tunneling Diode enables signal detection at zero bias and signal generation at forward bias within the regime of negative resistance. Signal generation and detection at above 250 GHz are experimentally demonstrated.