3D Defect Localization of Stacked Die Devices by Lock-in Thermography (LIT)

The article reports three real cases using lock-in thermography (LIT) for the fault isolation of multi stacked die devices, for which it is challenging to localize the defect position before destructive analysis since the structure is complicated. By measurement of the phase shift value, the defect depth can be successfully localized. Physical failure analysis was performed on all three cases and the results match the LIT fault isolation result.