Biasing for Zero Distortion: Using the EKV\/BSIM6 Expressions

The EKV/BSIM6 model is well suited to find the optimum biasing point of a metal-oxide-semiconductor transistor (MOST) for zero third-order intermodulation IM
₃
distortion. This article provides a derivation of a simple expression for this biasing point, for all possible regions of operation, i.e., the weak inversion (wi), the strong inversion (si), the velocity saturation (vsat), and all their crossover regions. Because the expressions are relatively simple, this overview provides, at the same time, a set of EKV/BSIM6 model expressions to be used for design and educational purposes.