Thermal Effects Analysis of GaN HEMT Power Amplifier Based on LTCC Substrate Integration

This study presents a thermal effects investigation of a GaN HEMT power amplifier under a high-power microwave pulses integrated on Low Temperature Co-fired Ceramics LTCC substrate. Based on the substrate properties and the GaN device characteristics, a thermal mechanical analysis has been assessed, and performed to investigate the heat cooling and the temperature distribution leading to a thermal breakdown. Self-heating and the temperature accumulation properties are used for deeper discussion on semiconductor protection to optimize the width and the power of the inj ected signal.