0.1 /spl mu/m T-gate p-type Ge/SiGe MODFETs

The DC and RF performance of a 0.1 /spl mu/m gate-length p-type modulation-doped field-effect transistor (MODFET) is reported. The hole channel consists of a compressively strained Ge layer grown on a relaxed Si/sub 0.4/Ge/sub 0.6/ buffer on a Si substrate. The combination of a high hole mobility of 1400 cm/sup 2//Vs, a high sheet carrier density of 3/spl times/10/sup 12/ cm/sup -2/, and a short gate length of about 100 nm result in a unity current gain frequency (f/sub t/) of 55 GHz and a maximum frequency of oscillation (f/sub max/) of 88 GHz.