BI-RME modeling of passive structures for silicon MMICs: feasibility and results

The paper reports a novel full-wave approach to the analysis of boxed planar passive structures for Monolithic Microwave Integrated Circuits (MMICs) on lossy substrates. Based on the Boundary Integral-Resonant Mode Expansion (BI-RME) method, the new approach leads to the direct determination of the mathematical model of a planar circuit, in the form of the pole expansion of the admittance matrix in the frequency domain. Any type of frequency- or time-response can be deduced in negligible times from this model. Some examples demonstrate the efficiency of the method.