All-silicon nonlinear transmission line integrated into a Si/SiGe heterostructure bipolar transistor process

Summary form only given. Nonlinear Transmission Lines (NLTL) have been fabricated so far on GaAs substrates only. Recently, we were able to demonstrate a working nonlinear transmission line for the first time on high resistivity silicon proving the applicability of the NLTL concept to silicon millimeter wave integrated circuits (SIMMWICs). We have significantly improved our previous results by integrating the NLTL into a Si/SiGe Heterostructure Bipolar Transistor (HBT) process. The falltime of 74 ps of a 4 GHz sine wave was compressed to 12 ps, 4 V amplitude at the output of the NLTL.