Towards mm-wave nanoelectronics and RF switches using MoS2 2D Semiconductor

In this paper, we report state-of-the-art large area CVD monolayer MoS
₂
-based RF transistors and RF switches. An embedded gate structure was used to fabricate short channel CVD Mos
₂
Rf FETs with an intrinsic f
_T
of 20 GHz, intrinsic f
_max
of 11.4 GHz, and the high-field saturation velocity V
_sat
of 1.88×10
⁶
cm/s. The gate-first process allows for enhancement mode operation, ION/IOFF ratio of 10
⁸
, and a transconductance (g
_m
) of 70 μS/μm. Also, we use a vertical MIM structure for a RF switch based on CVD Mos
₂
. The device was programmed with a voltage as low as 1 V, and achieves an ON-state resistance of ~5 Ω and an OFF-state capacitance of ~6 fF. We measured and simulated the RF performance of the device up to 50 GHz and report 0.5 dB insertion loss, 15 dB isolation (both at 50 GHz), and 5 THz cutoff frequency.