The impact of crystal cut error on the measured impurity profiles resulting from ion implantation

In this paper, the effect of crystal cut error on ion-implanted impurity profiles in silicon is examined. Accurate measurements of crystal cut errors have been performed using the X-ray diffraction method, and a method of calculating the effect of crystal cut error on the implant tilt/rotation angle is provided. The subsequent effect of crystal cut error on ion-implanted profiles is simulated, and the results are compared with SIMS experimental data. The comparison shows the validity of the crystal cut error calculation outlined in this paper, and the importance of taking crystal cut error into account in the comparison of measured and simulated impurity profiles, and in evaluating, calibrating, and comparing ion implant tools.