Physical and Electrical Properties of New Zr Precursors with High Thermal Stability for High-k

New Zr precursors have been developed using a tri-amine structure with enhanced thermal stability. The ALD window of the tri-amine structure is 220 to 320 degrees Celsius. In the capacitor structure with aspect ratio of 60 to 1, the step coverage was 99 percent. The dielectric constants of the ZrO2 thin films using tri-amine structure were improved by up to 13 percent and the leakage currents were similar to those of the cyclopentadienyl structure.