Non-linear Characterization and Modeling of 3-port Transistor

This paper presents a 3-port modeling and electrical characterization methodology for a GaAs HEMT transistor. From the I-V measurements and the S-parameters, a nonlinear model has been developed. The interest of this methodology is to determine accurate 3-port nonlinear model in high frequencies compared to the standard 2-port modeling approach provided by foundries. The modeling methodology presented in this paper has been validated up to 40 GHz for several bias points on a transistor expected for a Ku-band LNA design. Accuracy of this approach is highlighted by simulation and measurements comparisons.