Improved Distribution of Resistance Switching Through Localized Ti-Doped NiO Layer With InZnOx/CuOx Oxide Diode

Asymmetric sized single oxide diode (InZnO
_x
/CuO
_x
) with single resistor (Ti-doped NiO) device (1D-1R) was integrated into a crossbar array at room temperature to provide high current through the diode while keeping resistance switching localized in a small area. The Ti (0.1 wt %) doped NiO layer was fabricated inside an inverted cone-structure to localize switching and improve general device performance. We were able observe resistance switching up to around 100 cycles in the 1D-1R structure. In addition, the addition of the diode to the structure acted as an external resistance suppressing overflow current during Ti-doped NiO switching from a high resistance state to a low resistance state, thus improving switching distribution in both low (average = 3.2×10
^-5
Ω, standard deviation = 1.3×10
^-6
) and high (average = 2.8×10
^-6
Ω, standard deviation = 6.7×10
^-7
) resistance states.