Switching Voltage Analysis of Nanoelectromechanical Memory Switches for Monolithic 3-D CMOS-NEM Hybrid Reconfigurable Logic Circuits

The accurate calculation of switching voltage (
${V}_{s}$
) is necessary for the reliable and low-power operation of monolithic 3-D (M3D) CMOS-nanoelectromechanical (NEM) hybrid reconfigurable logic circuits because
${V}_{s}$
corresponds to the operating voltage (
${V}_{\text {dd}}$
) of NEM memory switches. In this paper, based on the Euler–Bernoulli equation, the physics-based analytical model is proposed to determine
${V}_{s}$
. The accuracy of the proposed model is verified by both the finite-element analysis and experimental results. Our proposed model shows >3% error compared with experimental data. Also, the design guidelines of NEM memory switches are presented in terms of minimum
${V}_{s}$
(
${V}_{s\_{}{m}}$
) and device dimensions.