Ultra-high-efficient Writing in Voltage-Control Spintronics Memory(VoCSM); the Most Promising Embedded Memory for Deep Learning

Our new proposal of voltage-control spintronics memory (VoCSM) in which spin-orbit torque (SOT) in conjunction with the voltage-control-magnetic-anisotropy (VCMA) effect works as the writing principle showed small switching current of 37 μ A for about 350 K
_B
T switching energy. This indicates VoCSM's writing efficiency is so high that VoCSM would be applicable for deep learning (DL) memories requiring ultra-low energy consumption.