InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with
$W_{\mathrm{ fin}}$
down to 20 nm, EOT of 2.1 nm, and
$L_{G} = 60$
nm shows high
$I_{\mathrm{ ON}} = 188~\mu \text{A}/\mu \text{m}$
at
$V_{DD} = 0.5$
V and
$I_{\mathrm{ OFF}} = 100$
nA/
$\mu \text{m}$
,
$I_{\mathrm{ ON}}/I_{\mathrm{ OFF}} = 5 \times 10^{5}$
, DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance (
$G_{\mathrm{ m}}$
) of 1142
$\mu \text{S}/\mu \text{m}$
at
$V_{\mathrm{ DS}}$
of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low
$R_{\mathrm{ SD}}$
realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor.