Micromachined probes with integrated GaAs Schottky diodes for on-wafer temperature sensing

The design and fabrication process for implementing a proof-of-concept on-wafer probe with integrated diode temperature sensor is reported. The sensor consists of a wafer probe fabricated from high-resistivity silicon using micromachining techniques. The temperature sensing element is a GaAs Schottky diode that is integrated with the probe through an epitaxy transfer process that utilizes SU-8 as a bonding agent. Design of the probe as well as fabrication and measurement of prototype diodes for the temperature sensor are described.