Extraction of parasitic parameters of IGBT module based on three - stage method

Power semiconductor devices are essential components in the field of power electronics. They have broad application prospects in switching power supply, frequency conversion, display, energy saving, and ecological and environmental protection. IGBT modules are rapidly evolving semiconductor power devices that combine the benefits of MOSFET and GTR. IGBT modules are the core components of energy conversion and transmission, which not only have high-speed switching characteristics and gating characteristics of MOSFET but also have low saturation voltage drop characteristics of GTR. The internal structures of IGBT modules are complex, so it is necessary to get an accurate and effective method for extracting parasitic parameters of IGBT modules. In this paper, a three-stage method is introduced to extract the parasitic parameters of IGBT modules. Compared with conventional measurement methods, this method is more convenient and precise. Finally, the method is applied to the extraction and calculation of an IGBT module, which further verifies the usability and practicability of the method.