Broadband quasi-optical sub-THz detector based on GaAs HEMT

This paper presents design and testing of a broadband quasi-optical sub-THz detector based on a GaAs/AlGaAs HEMT transistor monolithically integrated with an antenna and mounted on a high-resistivity silicon hyper- spherical lens. Comparative measurements of the fabricated device have been performed to reveal that the responsivity of the resulting detector in the frequency range of 100-200 GHz is on the order of 150 V/W while in the range of 200-300 GHz it falls to ca. 30 V/W.