Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications

In this paper, a 100-nm gate length InAs high electron mobility transistor (HEMT) with non-alloyed Ti/Pt/Au ohmic contacts and mesa sidewall channel etch was investigated for high-speed and low-power logic applications. The device exhibited a low subthreshold swing (SS) of 63.3 mV/decade, a drain induced barrier lowering value of 23.3 mV/V, an I
_ON
/I
_OFF
ratio of 1.34 × 10
⁴
, a G
_m,max
/SS ratio of 27.6, a current gain cut-off frequency of 439 GHz with a gate delay time of 0.36 ps, and an off-state gate leakage current of less than 1.6 × 10
^-5
A/mm at V
_DS
= 0.5 V. These results demonstrated that the presence of non-annealed ohmic contacts with mesa sidewall etch process allowed the fabrication of InAs HEMTs with excellent electrical characteristics for high-speed and low-power logic applications.