Steep slope 2D strain field effect transistor: 2D-SFET

Numerous advancements have allowed continuous aggressive dimensional scaling of CMOS to the current state of the art 10nm node but none are solutions to the fundamental Boltzmann statistics limits which have stalled Dennard voltage scaling. The semiconductor industry has invested heavily in disruptive, "steep slope" transistor technologies which promise lower operating voltages and dramatically reduced power consumption. While many of these technologies show great promise such as Tunnel FETs, Phase Change FETs, and even nanomechanical switches, all are far from commercialization and large-scale integration due to issues ranging from poor ON currents, limited switching ranges and reliability[4, 5].