H³TRB Test on 1.2 kV SiC MOSFETs

Reliability characterisation of SiC devices is an ongoing activity. For this work, four different splits of opened and gel-filled, 1200 V SiC MOSFETs in TO247 housings were tested in H³TRB for almost 2000 hours with monitoring of the leakage currents. In addition, electrical measurements and visual inspection were performed at intermediate time-steps. The objectives were investigating different passivation structures as well as the influence of a silicone gel encapsulation on the devices' humidity degradation.