Integrated Cooling Channels in Direct Bonded Copper Substrate for Silicon Carbide MOSFETs

A cooling structure etched into a direct bonded cop- per substrate is examined for new wide band gap silicon carbide devices. Simulations are carried out for an initial setup to test the feasibility of such a cooling structure. For further optimization, simula- tions with different material combinations and ge- ometry parameters are conducted for silicon car- bide devices. An optimized prototype is manufac- tured for experimental verification and shows good agreement with the simulations. It is demonstrated that integrated micro-channel structures etched into direct copper substrates provide a compact and ef- ficient cooling solution for power semiconductors.