Dynamic Current Sharing and Gate Feedback During Turn-OFF of Paralleled IGBTs

Current redistributions occur during turn-OFF of paralleled IGBTs. This effect has been observed by measurements and simulations before. Though, this paper explains the physical redistribution mechanism in detail. The process of this redistributions is defined by the electron and hole currents in the IGBTs, their gate- and collector-emitter voltages and by their influence on each other. The redistributions end, when the collector-emitter voltages reach the dc-link voltage.