New 1200 V IGBT and Diode Technology with Improved Controllability for Superior performance in drives application

New 1200 V IGBT and diode technology optimized for drives application are presented. The proposed IGBT structure is based on micro-pattern trenches with sub-micron mesas which provide strongly reduced static losses compared to standard technologies and offer a high level of controllability. For the diode, improved performance with significantly reduced oscillatory behavior is achieved due to an optimized field-stop design. In power modules, higher current density and larger output current are reached due to the superior performance of IGBT and diode. Additionally, by raising the allowed maximum operation temperature up to 175 deg C in the power module, an increase of the output current of more than 50 % can be obtained.