A 3.3 kV / 800 A Ultra-High Power Density SiC Power Module

A 3.3 kV/800 A diode-less (D-less) SiC power module has been developed adopting the next High Power Density Dual (nHPD(exp 2)) package. The ultra-high power density value of 37.7 kVA/cm(exp 2) is realized by fulfilment with only SiC-MOSFETs. Furthermore, as a countermeasure for "bipolar degradation" issues related to body diodes in the SiC-MOSFET structure, a high throughput screening process is deployed. The low loss and high reliability characteristics of the D-less SiC module are set out herein.