A novel stacked class-E-like power amplifier with dual drain output power technique in 0.18 um RFSOI CMOS technology

A novel stacked class-E-like power amplifier (PA) topology with dual drain output power technique is proposed in this paper. Owing to the dual drain output power enhanced technique, the total output power is 1.25 times of the conventional class-E PA with single drain output. Meanwhile, benefited from the low ON resistance switch device on high resistance and trap-rich substrate of RFSOI technology, high PAE and low cost performance are also obtained. In particular, a differential dual drain output power class-E-like PA with an on-chip transformer based power combiner has been implemented in 0.18 um radio frequency silicon-on-insulator CMOS (RF SOI CMOS) technology. Experimental results show a peak PAE of 51% for the class-E-like PA with saturated output power of 29.6 dBm at 1.8 GHz 2.5 V supply voltage.