Ge CMOS technology with advanced interface and junction engineering

The gate stack and source/drain (S/D) are two critical issues in Germanium(Ge) MOSFETs. In this paper, some recent progresses about gate stack and source/drain engineering are introduced. Using ozone post oxidation (OPO), a record high hole mobility has been realized under EOT of 0.6 nm by OPO. With MoS
₂
passivation, both high mobility and good reliability behaviors were observed. In addition, two novel junction fabrication techniques were also proposed. Spin-on-Doping (SOD) combining the laser annealing (LA) method realized ultra-shallow junctions and the improved current. Besides, high performance NiGe/n-Ge Schottky junction was also obtained with the microwave annealing (MWA) technology.