Magnetic Anisotropy and Damping Constant in CoFeB/Ir and CoFeB/Ru Systems

Co₂₀Fe₆₀B₂₀ thin films of various thicknesses (3 nm ≤ t_CFB ≤ 14 nm) have been sputtered on thermally oxidized Si substrates and capped with 8 nm-thick Ir or Ru layers and then annealed at 400 °C. A vibrating sample magnetometer has been used to measure the CoFeB thickness dependence of the saturation magnetic moment per unit area in order to straightforwardly determine the magnetization at saturation and the magnetic dead layer thickness, found to be 1115 ± 50 emu/cm³ (930 ± 50 emu/cm³) and 1.53 nm (0.76 nm) for the as-deposited CoFeB/Ir (CoFeB/Ru) sytems, respectively. These values change to 1185 ± 50 emu/cm³ (1110±50 emu/cm³) and 2.93 nm (1.62 nm) for CoFeB/Ir (CoFeB/Ru) films annealed at 400 °C. Microstrip ferromagnetic resonance (MS-FMR) was used to investigate the Gilbert damping parameter and the magnetic anisotropy as a function of the CoFeB thickness. While the in-plane anisotropy field for the as-deposited films does not show a regular behavior versus the CoFeB thickness, a clear linear behavior of this field versus the reciprocal CoFeB effective thickness can be observed for the annealed samples. Moreover, the effective magnetization varies linearly with the inverse effective thickness of CoFeB due to the perpendicular interface anisotropy. This surface anisotropy constant, which was estimated to be 0.84 and 0.89 erg/cm² for the as-deposited CoFeB films capped with Ir or Ru, respectively, reinforces the perpendicular easy axis. The corresponding anisotropy constants for the annealed Ir and Ru capped films are found to be 1.07 and 0.57 erg/cm², respectively. Moreover, MS-FMR results revealed that the damping constant increases linearly with the reciprocal effective thickness of CoFeB, most probably due to spin pumping. The effective spin mixing conductance of the as-deposited (annealed) CoFeB/Ru and CoFeB/Ir has been estimated to be 12.93 nm^-2 (22.4 nm^-2) and 29.3 nm^-2 (43.85 nm^-2), respectively.