A channel-erasing 1.8 V-only 32 Mb NOR flash EEPROM with a bit-line direct-sensing scheme

A 1.8 V-only 32 Mb NOR flash EEPROM uses a channel-erasing scheme for the 0.49 /spl mu/m/sup 2/ cell in 0.25 /spl mu/m CMOS technology. The block decoder circuit with an erase-reset sequence performs channel-erase. The bit line direct sense permits sub-1.8 V operation, suitable for use in handheld systems.