A 660 MHz 64b SOI processor with Cu interconnects

The 64b PowerPC RISC microprocessor previously described is migrated from a 0.22 /spl mu/m SOI technology to a 0.18 /spl mu/m SOI technology. Key features of the 0.77 scaled 1.5 V technology are 0.08 /spl mu/m NFET channel lengths, 7 layer Cu metallization with low-/spl epsiv/ dielectric, low dose SOI substrate for improved material quality and productivity, and local interconnect. Dual gate oxide provides high I/O voltage compatibility. As this chip is a migration only 6 levels of metal and stacked devices for high voltage I/O were used.