Enhancement of optoelectronic properties on Al-doped ZnO ultra-thin film by using a multiple buffer layers process in nitrogen atmosphere

In this study, the multiple buffer layers process with various N
₂
atmosphere is designed to enhance the optoelectronic properties of 80nm Aluminum-doped ZnO (AZO) ultra-thin film. At first, the different multiple buffer layers of 0, 1, 2, 3, 4 had been deposited, the lowest resistance is 9.1×10
^-2
after three multiple layers process. Then, the different quantity of nitrogen (0, 0.4, 0.8, 1.2, 1.6 sccm) had been done and the lowest resistivity is 4.3×10
^-2
Ω-cm by using 0.4 sccm N
₂
atmosphere and the average transmittance from 400 to 800 nm is about 93.7%, the optimum figure of merit (FOM) is 9.7 × 10
^-5
Ω
^-1
. The results promote the application of AZO on transparent conductive thin film could be deposited in simple process.