An upgrade of ESD-reliability in HV 60-V nLDMOS-SCR devices by the discrete anode

Discrete modulation was applied to a 60 V nLDMOS drain-side inserted SCR npn-arranged type and pnp-arranged type to investigate the devices' electrostatic discharge (ESD) protection ability. When applying SCR npn-arranged type discrete-anode modulation to the drain side, a transmission-line-pulse test revealed that the I
_t2
slightly increased. When the discrete parameter was 91 sets, the most favorable I
_t2
was 2.157 A. Compared with the npn-arranged type, the SCR pnp-arranged type with discrete modulation applied to the anode had strong SCR characteristics. I
_t2
increased to more than 7 A. In addition, under discrete modulation, the SCR npn-arranged and pnp-arranged types had clearly higher current density. Using the discrete method, each P+ OD's ability to discharge ESD current thus increased.