Extraction of voltage-dependent capacitances of SiC device through inductive coupling method

The terminal capacitances of Silicon Carbide (SiC) semiconductor device affect its dynamic characteristics during switching and influence the EMC performance of the power conversion circuit. This paper describes an inductive coupling method to extract these capacitances with the device-under-test (DUT) operating at varying DC voltage. The capacitance extraction can be performed without direct electrical contact to the DUT.