Novel integration techniques of "recessed" high voltage field-drift MOSFET with HK/MG RMG technology

We report herein on the first commercial production of 32V high voltage Field-Drift MOSFET (FDMOS) embedded in HK/MG with RMG technology. To overcome the challenges encountered during the RMG process, a recessed structure with a specifically designed poly gate patterning was developed. By using the new scheme, the devices can prevent metal gate disruptions. By comparison with the traditional devices in poly/SiON technology, the recessed devices can maintain good performance without degradation. Some extra benefits are obtained with the scheme by 4 V improvement of gate dielectric breakdown. This approach can provide technological mass production techniques and reliable device characteristics for future PMIC and display driver ICs applications.