Dynamic switching and short circuit capability of 6.5kV silicon carbide MOSFETs

Electrically robust 6.5kV SiC MOSFETs are investigated for the static and dynamic performance, short circuit capability and safe operation area (SOA). SiC MOSFETs rated at 6.5kV were fabricated with different cell pitches from 12μm to 26μm that are able to withstand short circuit pulses of up to 8μs and have a turn-off SOA at 4400V up to twice the nominal current Inom. The paralleling of four MOSFETs was tested to represent a realistic setup while showing a substantial reduction in the switching loss by more than 80% compared to a silicon IGBT and Diode.