Normally-OFF dual-gate Ga2O3 planar MOSFET and FinFET with high ION and BV

Ga
₂
O
₃
is a promising Wide-Band-Gap material for power electronics due to its large bandgap and inexpensive native substrate. However, due to technological difficulties, only normally-ON n-type junctionless MOSFET (V
_th
<; 0 V) can be made easily. We propose using dual-gate configuration to achieve normally-OFF device for both Ga
₂
O
₃
planar MOSFET and FinFET. Through TCAD simulations with calibrated parameters, it is found that normally-OFF dual-gate planar device and FinFET can be achieved with 6X and 1X enhancement in ON-current (I
_ON
), respectively, as higher doping is allowed, while breakdown voltage is not sacrificed.