A 0.35μm 600V ultra-thin epitaxial BCD technology for high voltage gate driver IC

A 0.35μm 600V ultra-thin epitaxial BCD technology for high voltage gate driver IC is developed in this work, including 600V LDMOS, 600V isolation ring, asymmetric 20V NMOS, asymmetric 20V PMOS, symmetric 20V NMOS, symmetric 20V PMOS and BJT. Only 15 photo layers are used for the proposed 1P2M technology. The experimental devices demonstrate that the BVs of divided RESURF structures are 770V, and the isolation BVs between V
_D
of the 600V LDMOS and high side V
_B
are above 30V. The off-state BVs of the NMOS and the PMOS structures are greater than 38V, respectively, while the current capacity in the same area is doubled, namely, the area of the CMOS driver is decreased by 50% at least at same drive capability, compared with the competitor A.