An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Enhancement mode 650V rated p-GaN gate HEMTs are fabricated on 200 mm p
⁺
Si substrates by using an industrial, Au-free process. The devices show true e-mode performance, with a high V
t
of 2.8 V, low off-state leakage current and are dynamic R
DS-ON
free over the complete V
DS
and temperature range. High temperature reverse bias (HTRB) testing is done on-wafer and after packaging. For the first time, 650 V e-mode power HEMTs realized on 200 mm Si substrates, show industry ready device performance and pass 1008 hour reliability testing, at V
GS
=0 V, V
DS
=650 V.