P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness

This paper proposes the design and prototype development and testing of a gate-driver which enables to jointly optimize the performance in application of gate-injection type high electron mobility transistors, taking into account a number of diverse operational conditions, including nominal and abnormal events. The results show that it is possible to optimize the gate-driver parameters in such a way as to ensure optimum switching and free-wheeling performance, while ensuring enhanced short-circuit robustness.